PHD96NQ03LT Datasheet - NXP Semiconductors.

General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
● Low conduction losses due to low on-state resistance
● Simple gate drive required due to low gate charge