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MSM514102D Datasheet - Oki Electric Industry

MSM514102D image

Part Name
MSM514102D

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page
18 Pages

File Size
280.6 kB

MFG CO.
OKI
Oki Electric Industry OKI

DESCRIPTION
The MSM514102D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/ single-layer metal CMOS process. The MSM514102D/DL is available in a 26/20-pin plastic SOJ, 20- pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514102DL (the low-power version) is specially designed for lower-power applications.

FEATURES
• 4,194,304-word x 1-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Static Column mode, read modify write capability
• CS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
    26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514102D/DL-xxSJ)
    20-pin 400 mil plastic ZIP (ZIP20-P-400-1.27) (Product : MSM514102D/DL-xxZS)
    26/20-pin 300 mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM514102D/DL-xxTS-K)
                                                                                                     xx indicates speed rank.

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Part Name
Description
PDF
MFG CO.
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD X 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304 WORD x 1 BIT DYNAMIC RAM
Toshiba
4,194,304-word × 1-bit Dynamic RAM
Hitachi -> Renesas Electronics
4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
Oki Electric Industry
4,194,304 WORD X 4 BIT DYNAMIC RAM
Toshiba
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
Oki Electric Industry

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