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MGFS45V2325A(2011) Datasheet - MITSUBISHI ELECTRIC

MGFS45V2325A image

Part Name
MGFS45V2325A

Other PDF
  1999   lastest PDF  

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2 Pages

File Size
109.7 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power
   P1dB=32W (TYP.) @f=2.3 – 2.5GHz
● High power gain
   GLP=12.0dB (TYP.) @f=2.3 – 2.5GHz
● High power added efficiency
   P.A.E.=45% (TYP.) @f=2.3 – 2.5GHz
● Low distortion [item -51]
   IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L

APPLICATION
● item 01 : 2.3 – 2.5 GHz band power amplifier
● item 51 : 2.3 – 2.5 GHz band digital radio communication

Page Link's: 1  2 
 

Part Name
Description
PDF
MFG CO.
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . ( Rev : 1998 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1998 )
MITSUBISHI ELECTRIC

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