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IRL2203S Datasheet - International Rectifier

IRL2203S image

Part Name
IRL2203S

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page
9 Pages

File Size
161.1 kB

MFG CO.
IR
International Rectifier IR

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Logic-Level Gate Drive
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

 

Page Link's: 1  2  3  4  5  6  7  8  9 
 

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Description
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