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IRF5805TRPBF Datasheet - International Rectifier

IRF5805PBF image

Part Name
IRF5805TRPBF

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9 Pages

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187.3 kB

MFG CO.
IR
International Rectifier IR

Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. Its unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

• Ultra Low On-Resistance
• P-Channel MOSFET
• Surface Mount
• Available in Tape & Reel
• Low Gate Charge
• Lead-Free
• Halogen-Free

Page Link's: 1  2  3  4  5  6  7  8  9 
 

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