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AOD4120 Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AOD4120 image

Part Name
AOD4120

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page
5 Pages

File Size
549 kB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER

Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=20V,ID=45A,RDS(ON)< 8mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.

 

Part Name
Description
PDF
MFG CO.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified
N-Channel MOSFET uses advanced trench technology
Unspecified

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