datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Unisonic Technologies  >>> 4N70L-TF1-T PDF

4N70L-TF1-T(2009) Datasheet - Unisonic Technologies

4N70 image

Part Name
4N70L-TF1-T

Other PDF
  2012   lastest PDF  

PDF
DOWNLOAD     

page
6 Pages

File Size
214.9 kB

MFG CO.
UTC
Unisonic Technologies UTC

DESCRIPTION
The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 2.8Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 15nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

 

Part Name
Description
PDF
MFG CO.
12 Amps, 700 Volts N-CHANNEL MOSFET ( Rev : 2009 )
Unisonic Technologies
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
1.2 Amps, 700 Volts N-CHANNEL MOSFET
Unisonic Technologies
12 Amps, 700 Volts N-CHANNEL MOSFET
Unisonic Technologies
4 Amps, 900 Volts N-CHANNEL POWER MOSFET ( Rev : 2011 )
Unisonic Technologies
4 Amps, 900 Volts N-CHANNEL POWER MOSFET ( Rev : 2014 )
Unisonic Technologies
4 Amps, 900 Volts N-CHANNEL MOSFET ( Rev : 2010 )
Unisonic Technologies
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Zibo Seno Electronic Engineering Co.,Ltd
Power MOSFET 4 Amps, 20 Volts
ON Semiconductor

Share Link: GO URL

Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]