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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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S-L2SA1365GLT3G 데이터시트 - Leshan Radio Company,Ltd

S-L2SA1365ELT1G image

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S-L2SA1365GLT3G

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3 Pages

File Size
661 kB

제조사
LRC
Leshan Radio Company,Ltd 

DESCRIPTION
L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).


FEATURE
● Small collector to emitter saturation voltage.
   VCE(sat)=-0.2V typ
● Excellent linearity of DC forward current gain.
● Super mini package for easy mounting
● We declare that the material of product compliance with RoHS requirements.
● We declare that the material of product is ROHS compliant
● High collector current I =-1A CM
● High gain band width product f =180MHz typ T
● S- Prefix for Automotive and Other Applications Requiring Unique Site
   and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.


APPLICATION
   Small type motor drive, relay drive, power supply.


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