Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.

FEATUREs
■ Low thermal resistance 
■ SO8 equivalent area footprint
■ Low gate drive 
■ Low on-state resistance.

APPLICATIONs
■ DC-to-DC converters 
■ Switched-mode power supplies
■ Portable appliances 
■ Notebook computers.