PBSS5140V 데이터시트 - NXP Semiconductors.

DESCRIPTION
PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V.

FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package
• Improved thermal behaviour due to flat leads
• Self alignment during soldering due to straight leads
• Low collector-emitter saturation voltage
• High current capability

APPLICATIONS
• General purpose switching and muting
• LCD back lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video cameras and hand-held devices).