PBSS5140T,215 데이터시트 - NXP Semiconductors.

General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation

APPLICATIONs
■ General-purpose switching and muting
■ LCD backlighting
■ Supply line switching circuits
■ Battery-driven equipment (mobile phones, video cameras and handheld devices)