MRF857S 데이터시트 - New Jersey Semiconductor

The RF Line
NPN Silicon RF Power Transistor

Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz.

• Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
   Output Power = 2.1 Watts CW
   Minimum Power Gain = 12.5 dB
   Minimum ITO = +43 dBm
   Typical Noise Figure = 5.25 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
   Large–Signal Parameters from 800–960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
   VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.4 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
   Migration
• Circuit board photomaster available upon request by contacting
   RF Tactical Marketing in Phoenix, AZ.