KBPC801 데이터 시트보기 (PDF) - New Jersey Semiconductor

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KBPC801

8.0A SINGLE - PHASE SILICON BRIDGE

New Jersey Semiconductor 

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage

Max RMS Bridge Input Voltage

Maximum Average Forward

Rectified Output Currentat at

Tc = 1 00 °C •

1>40°C"

1 Peak forward Surge Current, 6.3 ms single

halt sine-wave superimposed on rated load

Maximum Forward Voltage Drop per Bridge element

at 4.0A Peak

Maximum Reverse Current at Rated

DC Blocking Vottage per element

Operating Temperature Range Tc

Storage Temperature Range Tt

T, * 25 «C

TA * 1 00 °C

KBPC8006 KBPC801 KBPC802 KBPC804 KBPC806 KBPC808 KBPC610 UNITS

50

100

200

400

600

800

1000

V

35

70

140

280

420

560

700

V

8.0

A

3,0

A

125

A

1.1

V

10,0

HA

1.0

mA

-55 to* 125

"C

-55 to* 1510

°C

NOTES:* Unit mounted on metal chassis

** Unit mounted on P.C. board

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