R5F10367ASP-W0 데이터 시트보기 (PDF) - Renesas Electronics

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R5F10367ASP-W0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)

(3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (−) = VSS (ADREFM = 0),

target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage

(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (−) = VSS)

Parameter

Symbol

Conditions

MIN.

TYP. MAX.

Resolution

RES

8

10

Overall errorNote 1

AINL 10-bit resolution

1.2

±7.0

Conversion time

tCONV

10-bit resolution

3.6 V ≤ VDD ≤ 5.5 V 2.125

39

Target pin: ANI0 to ANI3,

2.7 V ≤ VDD ≤ 5.5 V 3.1875

39

ANI16 to ANI22

2.4 V ≤ VDD ≤ 5.5 V

17

39

Conversion time

tCONV

10-bit resolution

3.6 V ≤ VDD ≤ 5.5 V 2.375

39

Target pin: internal reference 2.7 V ≤ VDD ≤ 5.5 V 3.5625

39

voltage, and temperature

sensor output voltage (HS 2.4 V ≤ VDD ≤ 5.5 V

17

39

(high-speed main) mode)

Zero-scale errorNotes 1, 2

EZS

10-bit resolution

±0.60

Full-scale errorNotes 1, 2

EFS

10-bit resolution

±0.60

Integral linearity errorNote 1

ILE

10-bit resolution

±4.0

Differential linearity error Note 1 DLE

10-bit resolution

±2.0

Analog input voltage

VAIN

ANI0 to ANI3, ANI16 to ANI22

0

VDD

Internal reference voltage

(HS (high-speed main) mode)

VBGR Note 3

Temperature sensor output voltage

(HS (high-speed main) mode)

VTMPS25 Note 3

Notes 1. Excludes quantization error (±1/2 LSB).

2. This value is indicated as a ratio (%FSR) to the full-scale value.

3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.

Unit

bit

LSB

μs

μs

μs

μs

μs

μs

%FSR

%FSR

LSB

LSB

V

V

V

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 97 of 106

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