STL60N3LLH5 데이터 시트보기 (PDF) - STMicroelectronics

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STL60N3LLH5

N-channel 30 V, 0.0063 Ω, 17 A PowerFLAT™ (5x6) STripFET™ V Power MOSFET

STMicroelectronics 

STL60N3LLH5

Electrical characteristics

Table 8. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 17 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A,

di/dt = 100 A/µs,

VDD=25 V, Tj=150 °C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%

Min Typ. Max Unit

-

17 A

-

68 A

-

1.1 V

22

ns

-

15

nC

1.4

A

Doc ID 17268 Rev 1

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