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STM32F100VB 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F100VB Datasheet PDF : 96 Pages
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
5.3.4
5.3.5
Embedded reference voltage
The parameters given in Table 11 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
Symbol
Table 11. Embedded internal reference voltage
Parameter
Conditions
Min Typ Max Unit
VREFINT Internal reference voltage
ADC sampling time when
TS_vrefint(1) reading the internal
reference voltage
–40 °C < TA < +105 °C 1.16 1.20
–40 °C < TA < +85 °C 1.16 1.20
-
- 5.1
Internal reference voltage
VRERINT(2) spread over the temperature
VDD = 3 V ±10 mV
-
-
range
TCoeff(2) Temperature coefficient
-
-
-
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
1.26
V
1.24
V
17.1(2) µs
10
mV
100 ppm/°C
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
All I/O pins are in input mode with a static value at VDD or VSS (no load)
All peripherals are disabled except if it is explicitly mentioned
Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK
The parameters given in Table 12 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
DocID16455 Rev 9
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