STM32F100R4H6B(2010) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F100R4H6B
(Rev.:2010)

Low & medium-density value line, advanced ARM-based 32-bit MCU with 16 to 128 KB Flash, 12 timers, ADC, DAC & 8 comm interfaces

STMicroelectronics 

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB

Electrical characteristics

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 27. Flash memory characteristics

Symbol

Parameter

Conditions

Min(1) Typ Max(1) Unit

tprog 16-bit programming time

TA–40 to +105 °C

40 52.5 70 µs

tERASE Page (1 KB) erase time

TA –40 to +105 °C

20

40 ms

tME Mass erase time

TA –40 to +105 °C

20

40 ms

Read mode

fHCLK = 24 MHz, VDD = 3.3 V

20 mA

IDD Supply current

Write / Erase modes

fHCLK = 24 MHz, VDD = 3.3 V

5 mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

50 µA

Vprog Programming voltage

2

3.6

V

1. Guaranteed by design, not tested in production.

Table 28. Flash memory endurance and data retention

Symbol Parameter

Conditions

Value

Min(1) Typ

NEND Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

10

1 kcycle(2) at TA = 85 °C

30

tRET Data retention 1 kcycle(2) at TA = 105 °C

10

10 kcycles(2) at TA = 55 °C

20

1. Based on characterization not tested in production.

2. Cycling performed over the whole temperature range.

Max

Unit

kcycles

Years

Doc ID 16455 Rev 2

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