NAND04GA3C2N6E 데이터 시트보기 (PDF) - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

9 Software algorithms

Table 13. Block Failure

Operation

Erase

Program

Read

1. Example: 4 bit correction per 528 Bytes.

Figure 11. Bad Block Management Flowchart

START

NAND04GA3C2A, NAND04GW3C2A

Recommended Procedure

Block Replacement

Block Replacement or ECC(1)

ECC(1)

Block Address =

Block 0

Increment

Block Address

Data

NO

= FFh?

YES

Update

Bad Block table

Last

NO

block?

YES

END

Figure 12. Garbage Collection

Old Area

AI07588C

New Area (After GC)

Valid

Page

Invalid

Page

Free

Page

(Erased)

AI07599B

30/51

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