STPS8H100FP(2006) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS8H100FP Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS8H100
Table 2. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
TO-220AC, D2PAK
TO-220FPAC
Value
1.6
4
Unit
° C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ Max.
Unit
IR (1) Reverse leakage current
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 8 A
4.5
µA
2
6.0
mA
0.71
0.56 0.58
VF (2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
IF = 10 A
IF = 16 A
0.77
V
0.59 0.64
0.81
0.65 0.68
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.48 x IF(AV) + 0.0125 IF2(RMS)
Figure 1.
Average forward power
dissipation versus average
forward current
Figure 2. Normalized avalanche power
derating versus pulse duration
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012
δ = 0.05
3
δ = 0.1 δ = 0.2
IF(av) (A)
456
δ = 0.5
δ=1
T
δ=tp/T
tp
7 8 9 10
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
2/9
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