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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

STM32F030R4P6(2013) 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F030R4P6 Datasheet PDF : 88 Pages
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Electrical characteristics
6.3.6
Table 27. Switching output I/O current consumption
I/O toggling
Symbol Parameter
Conditions(1)
frequency
Typ
Unit
(fSW)
4 MHz
0.18
VDD = 3.3 V
CEXT = 0 pF
C = CINT + CEXT+ CS
8 MHz
16 MHz
24 MHz
0.37
0.76
1.39
48 MHz
2.188
ISW
I/O current
consumption
VDD = 3.3 V
CEXT = 22 pF
C = CINT + CEXT+ CS
4 MHz
8 MHz
16 MHz
24 MHz
0.49
mA
0.94
2.38
3.99
VDD = 3.3 V
CEXT = 47 pF
C = CINT + CEXT+ CS
C = Cint
4 MHz
8 MHz
16 MHz
0.81
1.7
3.67
1. CS = 7 pF (estimated value)
Wakeup time from low-power mode
The wakeup times given in Table 28 is measured on a wakeup phase with a 8-MHz HSI RC
oscillator. The event used to wake up the device depends from the current operating mode:
Stop or sleep mode: the wakeup event is WFE.
The wakeup pin used in stop and sleep mode is PA0 and in standby mode is PA1.
All timings are derived from tests performed under ambient temperature and VDD supply
voltage conditions summarized in Table 18: General operating conditions.
Table 28. Low-power mode wakeup timings
Symbol
Parameter
Conditions
Typ @VDD
Max Unit
= 3.3 V
tWUSTOP
Wakeup from Stop mode
Regulator in run mode
tWUSTANDBY Wakeup from Standby mode
tWUSLEEP Wakeup from Sleep mode
4.2
50.96
1.1
5
-
µs
-
DocID024849 Rev 1
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