M50FLW040ANB5TP 데이터 시트보기 (PDF) - STMicroelectronics

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M50FLW040ANB5TP

4-Mbit (5 × 64 Kbyte blocks + 3 × 16 × 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory

STMicroelectronics 

Program and Erase times

7

Program and Erase times

M50FLW040A, M50FLW040B

The Program and Erase times are shown in Table 18.

Table 18. Program and Erase times

Parameter

Interface

Test Condition Min Typ(1) Max Unit

Byte Program

Double Byte Program

Quadruple Byte Program

Block Program

Sector Erase (4 KBytes)(5)

Block Erase (64 KBytes)

Chip Erase

Program/Erase Suspend to

Program pause(5)

FWH

A/A Multiplexed

FWH

A/A Multiplexed

VPP = 12 V ± 5%

VPP = 12 V ± 5%

VPP = 12 V ± 5%

VPP = VCC

VPP = 12 V ± 5%

VPP = VCC

VPP = 12 V ± 5%

VPP = VCC

VPP = 12 V ± 5%

10 200 µs

10(2) 200 µs

10(3) 200 µs

0.1(4) 5

s

0.4 5

0.4 4

s

0.5 5

0.75 8

s

1 10

5

s

5 µs

Program/Erase Suspend to

Block Erase/Sector Erase

pause(5)

30 µs

1. TA = 25°C, VCC = 3.3V

2. Time to program two Bytes.

3. Time to program four Bytes.

4. Time obtained executing the Quadruple Byte Program command.

5. Sampled only, not 100% tested.

38/64

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