M25PE40-VMN6TG 데이터 시트보기 (PDF) - STMicroelectronics

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M25PE40-VMN6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

STMicroelectronics 

Table 6. Power-Up Timing and VWI Threshold

Symbol

Parameter

tVSL1 VCC(min) to S low

tPUW1 Time delay before the first Write, Program or Erase instruction

VWI1 Write Inhibit Voltage

Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.

INITIAL DELIVERY STATE

The device is delivered with the memory array

erased: all bits are set to 1 (each Byte contains

FFh). All usable Status Register bits are 0.

M25PE40

Min.

30

1

1.5

Max. Unit

µs

10

ms

2.5

V

25/37

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