M25P32-VMN6TPB 데이터 시트보기 (PDF) - Numonyx -> Micron

부품명

상세내역

제조사

M25P32-VMN6TPB

32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface

Numonyx -> Micron 

M25P32

DC and AC parameters

Table 15. AC characteristics (T9HX technology) (continued)

Applies only to products made with T9HX technology, identified with Process digit “4”(1)

Test conditions specified in Table 10 and Table 12

Symbol Alt.

Parameter

Min.

Typ.(2)

Max. Unit

tW

Write Status Register cycle time

1.3

15 ms

Page Program cycle time (256 bytes)

0.64

tPP (8)

Page Program cycle time (n bytes)

int(n/8) × 0.02(9) 5 ms

Page Program cycle time (VPP = VPPH) (256 bytes)

0.64

Sector Erase cycle time

tSE

Sector Erase cycle time (VPP = VPPH)

0.6

3

s

0.6

Bulk Erase cycle time

tBE

Bulk Erase cycle time (VPP = VPPH)

23

80 s

13

1. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12: Part numbering.

2. Typical values given for TA = 25 °C.

3. tCH + tCL must be greater than or equal to 1/ fC

4. Value guaranteed by characterization, not 100% tested in production.

5. Expressed as a slew-rate.

6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.

7. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is

known.

8. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one

sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)

9. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.

Figure 23. Serial input timing

tSHSL

S

tCHSL

tSLCH

tCHSH

tSHCH

C

tDVCH

tCHCL

tCHDX

tCLCH

D

MSB IN

LSB IN

High Impedance

Q

AI01447C

43/54

Share Link: