STM32F405ZET7 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F405ZET7

ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera

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Electrical characteristics

STM32F405xx, STM32F407xx

5.3.8

External clock source characteristics

High-speed external user clock generated from an external source

The characteristics given in Table 29 result from tests performed using an high-speed

external clock source, and under ambient temperature and supply voltage conditions

summarized in Table 14.

Table 29. High-speed external user clock characteristics

Symbol

Parameter

Conditions

Min Typ Max Unit

fHSE_ext

External user clock source

frequency(1)

1

-

50 MHz

VHSEH

VHSEL

OSC_IN input pin high level voltage

OSC_IN input pin low level voltage

0.7VDD -

VDD

V

VSS

- 0.3VDD

tw(HSE)

tw(HSE)

tr(HSE)

tf(HSE)

Cin(HSE)

OSC_IN high or low time(1)

OSC_IN rise or fall time(1)

OSC_IN input capacitance(1)

5

-

-

ns

-

-

10

-

5

-

pF

DuCy(HSE) Duty cycle

45

-

55

%

IL

OSC_IN Input leakage current

VSS ≤ VIN ≤ VDD

-

-

±1

µA

1. Guaranteed by design, not tested in production.

Low-speed external user clock generated from an external source

The characteristics given in Table 30 result from tests performed using an low-speed

external clock source, and under ambient temperature and supply voltage conditions

summarized in Table 14.

Symbol

Table 30. Low-speed external user clock characteristics

Parameter

Conditions

Min

Typ

fLSE_ext

User External clock source

frequency(1)

VLSEH

OSC32_IN input pin high level

voltage

VLSEL OSC32_IN input pin low level voltage

tw(LSE)

tf(LSE)

OSC32_IN high or low time(1)

tr(LSE)

tf(LSE)

Cin(LSE)

OSC32_IN rise or fall time(1)

OSC32_IN input capacitance(1)

DuCy(LSE) Duty cycle

IL

OSC32_IN Input leakage current

1. Guaranteed by design, not tested in production.

VSS ≤ VIN ≤ VDD

-

32.768

0.7VDD

-

VSS

-

450

-

-

-

-

5

30

-

-

-

Max

1000

VDD

0.3VDD

-

50

-

70

±1

Unit

kHz

V

ns

pF

%

µA

96/185

DocID022152 Rev 4

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