STS4DPFS2LS 데이터 시트보기 (PDF) - STMicroelectronics
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STS4DPFS2LS
STMicroelectronics
STS4DPFS2LS Datasheet PDF : 8 Pages
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STS4DPFS2LS
P-CHANNEL 20V - 0.06Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
20 V < 0.07 Ω
SCHOTTKY
IF(AV)
VRRM
3A
40 V
ID
4A
VF(MAX)
0.44 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
EAS (1) Single Pulse Avalanche Energy
Value
20
20
± 20
4
3.4
16
2
20
Unit
V
V
V
A
A
A
W
mJ
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V
Value
Unit
40
V
10
A
TL = 120°C
3
A
δ = 0.5
tp = 10 ms
75
A
Sinusoidal
tp = 2 µs
1
A
F = 1 kHz
10000
V/µs
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
February 2001
1/8
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