ME4953-G データシート - ETC1

[Matsuki Electric]

GENERAL DESCRIPTION
The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
● RDS(ON)≦ 60mΩ@VGS=-10V
● RDS(ON)≦ 90mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter