ME4946 データシート - ETC

[Mqtsuki Electric]

GENERAL DESCRIPTION
The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
● RDS(ON)≦ 41mΩ@VGS=10V
● RDS(ON)≦ 52mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability

APPLICATIONS
● Power Management
● DC/DC Converter
● LCD TV & Monitor Display inverter
● CCFL inverter