2SB1346 データシート - Inchange Semiconductor
メーカー
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2027
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency and general purpose
amplifier applications.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor