STM32F031F6Y6TR(2015) データシートの表示（PDF） - STMicroelectronics

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STM32F031F6Y6TR
(Rev.:2015)

ARM®-based 32-bit MCU with up to 32 Kbyte Flash, 9 timers, ADC and communication interfaces, 2.0 - 3.6 V

STMicroelectronics 

STM32F031x4 STM32F031x6

Electrical characteristics

Symbol

Parameter

Table 46. I/O static characteristics (continued)

Conditions

Min

Typ

Max

Unit

Weak pull-up

RPU

equivalent resistor

(3)

VIN = VSS

25

40

55

kΩ

Weak pull-down

RPD

equivalent

resistor(3)

VIN = VDDIOx

25

40

55

kΩ

CIO I/O pin capacitance

-

-

5

-

pF

1. Data based on design simulation only. Not tested in production.

2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 45:

I/O current injection susceptibility.

3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 20 for standard I/Os, and in Figure 21 for

5 V tolerant I/Os. The following curves are design simulation results, not tested in

production.

DocID025743 Rev 4

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