STM32F031G4Y6TR(2015) データシートの表示（PDF） - STMicroelectronics
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STM32F031G4Y6TR
(Rev.:2015)
(Rev.:2015)
STMicroelectronics
STM32F031G4Y6TR Datasheet PDF : 106 Pages
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STM32F031x4 STM32F031x6
Electrical characteristics
6.3.4
6.3.5
Table 21. Programmable voltage detector characteristics (continued)
Symbol
Parameter
Conditions Min Typ Max Unit
VPVD4
PVD threshold 4
VPVD5
PVD threshold 5
VPVD6
PVD threshold 6
VPVD7
PVD threshold 7
VPVDhyst(1) PVD hysteresis
IDD(PVD) PVD current consumption
1. Guaranteed by design, not tested in production.
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
2.47 2.58 2.69 V
2.37 2.48 2.59 V
2.57 2.68 2.79 V
2.47 2.58 2.69 V
2.66 2.78 2.9
V
2.56 2.68 2.8
V
2.76 2.88
3
V
2.66 2.78 2.9
V
-
100
-
mV
-
0.15 0.26(1) µA
Embedded reference voltage
The parameters given in Table 22 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 18: General operating
conditions.
Table 22. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.2 1.25
V
tSTART
ADC_IN17 buffer startup
time
-
-
- 10(1)
µs
ADC sampling time when
tS_vrefint reading the internal
-
reference voltage
4(1)
-
-
µs
ΔVREFINT
Internal reference voltage
spread over the
temperature range
VDDA = 3 V
-
- 10(1)
mV
TCoeff
Temperature coefficient
-
1. Guaranteed by design, not tested in production.
- 100(1) - 100(1) ppm/°C
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
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