ME4953-G データシートの表示（PDF） - Unspecified
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ME4953-G Datasheet PDF : 5 Pages
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Dual P-Channel 30V (D-S) MOSFET
ME4953/ME4953-G
GENERAL DESCRIPTION
The ME4953 is the Dual P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and low in-line power loss are needed
in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
● RDS(ON)≦60mΩ@VGS=-10V
● RDS(ON)≦90mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
(SOP-8)
Top View
e Ordering Information: ME4953 (Pb-free)
ME4953-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
Tstg
RθJA
RθJC
Limit
-30
±20
-5.3
-4.3
-30
-1.7
2.0
1.3
-55 to 150
-55 to 150
T≦10 sec
47
Steady State
75
45
JuAlpy,r,22000087-V-Veerr43.0.0
Unit
V
V
A
A
A
W
℃
℃
℃/W
℃/W
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