R5F10366DNA-V0 データシートの表示（PDF） - Renesas Electronics

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R5F10366DNA-V0

RENESAS MCU True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation, 2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications

Renesas Electronics 

RL78/G12

2. ELECTRICAL SPECIFICATIONS (A, D: TA = −40 to +85°C)

<R> (7) Communication at different potential (2.5 V, 3 V) (CSI mode) (master mode, SCK00... internal clock output,

corresponding CSI00 only)

(TA = −40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

HS (high-speed

main) Mode

LS (low-speed Unit

main) Mode

MIN. MAX. MIN. MAX.

SCK00 cycle time

tKCY1

tKCY1 ≥ 2/fCLK

4.0 V ≤ VDD ≤ 5.5 V,

200

2.7 V ≤ Vb ≤ 4.0 V,

Cb = 20 pF, Rb = 1.4 kΩ

1150

ns

2.7 V ≤ VDD < 4.0 V,

300

2.3 V ≤ Vb ≤ 2.7 V,

Cb = 20 pF, Rb = 2.7 kΩ

1150

ns

SCK00 high-level width

tKH1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

tKCY1/2 −

tKCY1/2−

ns

Cb = 20 pF, Rb = 1.4 kΩ

50

50

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

tKCY1/2 −

tKCY1/2 −

ns

Cb = 20 pF, Rb = 2.7 kΩ

120

120

SCK00 low-level width

tKL1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

tKCY1/2 −

tKCY1/2 −

ns

Cb = 20 pF, Rb = 1.4 kΩ

7

50

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

tKCY1/2 −

tKCY1/2 −

ns

Cb = 20 pF, Rb = 2.7 kΩ

10

50

SI00 setup time

tSIK1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

58

(to SCK00↑) Note 1

Cb = 20 pF, Rb = 1.4 kΩ

479

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

121

Cb = 20 pF, Rb = 2.7 kΩ

479

ns

SI00 hold time

tKSI1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

10

(from SCK00↑) Note 1

Cb = 20 pF, Rb = 1.4 kΩ

10

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

10

10

ns

Cb = 20 pF, Rb = 2.7 kΩ

Delay time from SCK00↓

to SO00 output Note 1

tKSO1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

Cb = 20 pF, Rb = 1.4 kΩ

60

60

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

Cb = 20 pF, Rb = 2.7 kΩ

130

130

ns

SI00 setup time

tSIK1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

23

(to SCK00↓) Note 2

Cb = 20 pF, Rb = 1.4 kΩ

110

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

33

110

ns

Cb = 20 pF, Rb = 2.7 kΩ

SI00 hold time

tKSI1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

10

(from SCK00↓) Note 2

Cb = 20 pF, Rb = 1.4 kΩ

10

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

10

10

ns

Cb = 20 pF, Rb = 2.7 kΩ

Delay time from SCK00↑

to SO00 output Note 2

tKSO1

4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,

Cb = 20 pF, Rb = 1.4 kΩ

10

10

ns

2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,

10

10

ns

Cb = 20 pF, Rb = 2.7 kΩ

(Notes, Caution, and Remarks are listed on the next page.)

R01DS0193EJ0200 Rev.2.00

Sep 06, 2013

Page 41 of 106

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