Low Threshold DMOS Technology
The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
❑ Low threshold
❑ Low on resistance
❑ Independent, electrically isolated N- and P-channels
❑ Low input capacitance
❑ Fast switching speeds
❑ Free from secondary breakdowns
❑ Low input and output leakage

APPLICATION
❑ Medical Ultrasound Transmitters
❑ High voltage pulsers
❑ Amplifiers
❑ Buffers
❑ Piezoelectric transducer drivers
❑ General purpose line drivers
❑ Logic level interfaces