Número de pieza
STP6NB25
componentes Descripción
Other PDF
no available.
PDF
page
9 Pages
File Size
100.3 kB
Fabricante
STMicroelectronics
STP6NB25 Hoja de datos - STMicroelectronics
STMicroelectronics
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.9 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT
Número de pieza
componentes Descripción
Ver
Fabricante
N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET ( Rev : 2001 )
STMicroelectronics
N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™ II MOSFET
STMicroelectronics
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
STMicroelectronics
N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET ( Rev : 2000 )
STMicroelectronics
Share Link: 