STP5NC70Z Hoja de datos - STMicroelectronics
Fabricante
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-channel D-PAK/TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics