STP3NC70Z Hoja de datos - STMicroelectronics

DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 4.1Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY
   GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
   COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT