STP3NB80 Hoja de datos - Suntac Electronic

GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.

FEATURES
◆ Higher Current Rating
◆ Lower Rds(on)
◆ Lower Capacitances
◆ Lower Total Gate Charge
◆ Tighter VSD Specifications
◆ Avalanche Energy Specified