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STM4460 Hoja de datos - ETC

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Número de pieza
STM4460

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page
4 Pages

File Size
1 MB

Fabricante
ETC
ETC 

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description:
This N-Channel MOSFET uses advanced trench technology and  design to provide excellent RDS(on) with low gate charge.  It can be used in a wide variety of applications.


FEATUREs:
1) VDS=40V,ID=6.7A,RDS(ON)<32mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.


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Fabricante
N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
PDF
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified
N-Channel MOSFET uses advanced trench technology
PDF
Unspecified

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