STFW3N170 Hoja de datos - STMicroelectronics
Fabricante
STMicroelectronics
Description
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
FEATUREs
• Intrinsic capacitances and Qg minimized
• TO-3PF for higher creepage between leads
• High speed switching
• 100% avalanche tested
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
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