Número de pieza
P6NC80
componentes Descripción
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STMicroelectronics
P6NC80 Hoja de datos - STMicroelectronics
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 1.5Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
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N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
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Unspecified
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
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N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
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