NTE389 Hoja de datos - NTE Electronics

Description:
The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits.

FEATUREs:
● Collector–Emitter Voltage: VCEX = 1500V
● Glass Passivated Base–Collector Junction
● Forward Bias Safe Operating Area @ 50µs = 20A, 300V
● Switching Times with Inductive Loads: tf = 0.5µs (Typ) @ IC = 3A