datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  NXP Semiconductors.  >>> MMG3006NT1 PDF

MMG3006NT1 Hoja de datos - NXP Semiconductors.

MMG3006NT1 image

Número de pieza
MMG3006NT1

Other PDF
  no available.

PDF
DOWNLOAD     

page
24 Pages

File Size
460.7 kB

Fabricante
NXP
NXP Semiconductors. 

400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA

The MMG3006NT1 is a general purpose amplifier that is internally input prematched and designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small--signal RF.


FEATUREs
● Frequency: 400--2400 MHz
● P1dB: 33 dBm @ 900 MHz
● Small--signal gain: 17.5 dB @ 900 MHz
● Third order output intercept point: 49 dBm @ 900 MHz
● Single 5 V supply
● Internally input prematched to 50 ohms


Número de pieza
componentes Descripción
Ver
Fabricante
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2008 )
PDF
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2011 )
PDF
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2017 )
PDF
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
PDF
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
PDF
Freescale Semiconductor

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]