MMG3004NT1 Hoja de datos - Freescale Semiconductor
Número de pieza
MMG3004NT1
Fabricante
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2200 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small-signal RF.
FEATUREs
• Frequency: 400-2200 MHz
• P1dB: 27 dBm @ 2140 MHz
• Small-Signal Gain: 16 dB @ 2140 MHz
• Third Order Output Intercept Point: 44 dBm @ 2140 MHz
• Single 5 Volt Supply
• Internally Prematched to 50 Ohms
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2011 )
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2017 )
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Motorola => Freescale
Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
Freescale Semiconductor