MMG3001NT1 Hoja de datos - NXP Semiconductors.
Número de pieza
MMG3001NT1
Fabricante
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3001NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz, such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
FEATUREs
• Frequency: 40-3600 MHz
• P1dB: 18.5 dBm @ 900 MHz
• Small-Signal Gain: 20 dB @ 900 MHz
• Third Order Output Intercept Point: 32 dBm @ 900 MHz
• Single Voltage Supply
• Internally Matched to 50 Ohms
• Cost-effective SOT-89 Surface Mount Plastic Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.
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Fabricante
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Heterojunction Bipolar Transistor Technology (InGaP HBT) ( Rev : 2006 )
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