Número de pieza
MGFS45V2325A
componentes Descripción
Other PDF
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page
2 Pages
File Size
109.7 kB
Fabricante
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
● High output power
P1dB=32W (TYP.) @f=2.3 – 2.5GHz
● High power gain
GLP=12.0dB (TYP.) @f=2.3 – 2.5GHz
● High power added efficiency
P.A.E.=45% (TYP.) @f=2.3 – 2.5GHz
● Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
● item 01 : 2.3 – 2.5 GHz band power amplifier
● item 51 : 2.3 – 2.5 GHz band digital radio communication