Número de pieza
IRF620B
componentes Descripción
Other PDF
no available.
PDF
page
10 Pages
File Size
872.4 kB
Fabricante

Fairchild Semiconductor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
FEATUREs
• 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability