FQP2N30 Hoja de datos - Fairchild Semiconductor

General Description
These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.

FEATUREs
• 2.1A, 300V, RDS(on) = 3.7Ω @VGS = 10 V
• Low gate charge (typical 3.7 nC)
• Low Crss ( typical 3.0 pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability