FQI3N30 Hoja de datos - Fairchild Semiconductor

Features
• 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 5.5 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability