FQD2N90(2000) Hoja de datos - Fairchild Semiconductor

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FEATUREs
• 1.7 A, 900 V, RDS(on) = 7.2 Ω @ VGS = 10 V
• Low gate charge (Typivsl 12 nC)
• Low Crss (Typical 5.5 pF)
• Fast switching
• 100% Avalanche Tested
• Improved dv/dt capability