FDB12N50TM Hoja de datos - Fairchild Semiconductor

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FEATUREs
• RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant